Electronic semiconducting device and method for preparing the electronic semiconducting device

US11239440B2 · kind B2 · utility

Inventors

• Ulrich Heggemann · Dresden, DE
• Markus Hummert · Dresden, DE
• Thomas Rosenow · Dresden, DE
• Mauro Furno · Dresden, DE

Key dates

• Filing date: Feb 20, 2018
• Grant date: Feb 1, 2022
• Expiry date: Apr 6, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal sate and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Me, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (TV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib) wherein A1, A2, A3 and A4 are independently selected from CO, SO2 or POR1; R1=electron withdrawing group selected from the group comprising halide, nitrile, halogenated or perhalogenated C1 to C20 alkyl, halogenated or perhalogenated C6 to C20 aryl, or halogenated or perhalogen…