Elastic wave device
US11239819B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2018 |
| Grant date | Feb 1, 2022 |
| Priority date | — |
| Expiry date | Aug 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/877
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An elastic wave device includes a supporting substrate, an acoustic multilayer film on the supporting substrate, a piezoelectric substrate on the acoustic multilayer film, and an IDT electrode on the piezoelectric substrate. The acoustic multilayer film includes at least four acoustic impedance layers. The at least four acoustic impedance layers include at least one low acoustic impedance layer and at least one high acoustic impedance layer having an acoustic impedance higher than the low acoustic impedance layer. The elastic wave device further includes a bonding layer provided at any position in a range of from inside the acoustic impedance layer, which is the fourth acoustic impedance layer from the piezoelectric substrate side towards the supporting substrate side, to an interface between the acoustic multilayer film and the supporting substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.