Methods and devices for growing scintillation crystals with short decay time
US11242485B2 · kind B2 · utility
2Cited by
34References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 26, 2021 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Feb 26, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure discloses a method for growing a crystal with a short decay time. According to the method, a new single crystal furnace and a temperature field device are adapted and a process, a ration of reactants, and growth parameters are adjusted and/or optimized, accordingly, a crystal with a short decay time, a high luminous intensity, and a high luminous efficiency can be grown without a co-doping operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.