Patent · US Active

Integrated piezoresistive and piezoelectric fusion force sensor

US11243125B2 · kind B2 · utility

4Cited by
161References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 9, 2018
Grant dateFeb 8, 2022
Priority date—
Expiry dateJul 30, 2038

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81B3/0072
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.