Patent · US Active

Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture

US11243126B2 · kind B2 · utility

3Cited by
162References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 27, 2018
Grant dateFeb 8, 2022
Priority date
Expiry dateSep 26, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N69/00
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.