RF frequency tuning in silicon photoconductive-switch-based high power microwave systems
US11243418B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 16, 2019 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Jan 3, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0344
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An RF frequency tuning-in-silicon photoconductive-switch-based high power microwave system including a cradle; a transmission line proximate the cradle; a photosensitive silicon material switch component also proximate the cradle; a laser light source having a varied illumination incidence location on the photosensitive material; and a laser alignment component providing the location of the illumination incidence location on the photosensitive material; whereby the inductance of the switch varies as a function of the incidence location of the illumination on the photosensitive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.