Method of manufacturing optoeletronic device epitaxial structure
US11245049B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Dec 13, 2019 |
| Grant date | Feb 8, 2022 |
| Priority date | — |
| Expiry date | Feb 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure provide a method of manufacturing an optoelectronic device epitaxial structure. The method includes forming a mask pattern on a base substrate, the mask pattern defining a plurality of growth regions on the base substrate, and the plurality of growth regions being separated from each other; and forming an optoelectronic device epitaxial structure in each of the plurality of growth regions; and removing the mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.