Patent · US Active

Semiconductor laser

US11245248B2 · kind B2 · utility

0Cited by

4References

14Claims

0Family size

Assignee

SONY SEMICONDUCTOR SOLUTIONS CORPORATION · JP

Inventors

Shinya Satou · Hitachinaka, JP
Hideto Iki · Rifu, JP

Key dates

Filing date	Oct 19, 2018
Grant date	Feb 8, 2022
Priority date	—
Expiry date	Oct 30, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/176
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor laser includes a semiconductor layer including end faces and at least one of the end faces is configured as a light emission end face. The semiconductor layer includes a waveguide and a light window structure region. The waveguide has a first width and is extended between the end faces. The light window structure region includes an opening having a second width greater than the first width arranged along the waveguide and is formed continuously or intermittently from one to another of the end faces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.