Patent · US Active

Spin valve and spintronic device comprising the same

US11249150B2 · kind B2 · utility

1Cited by

0References

8Claims

0Family size

Assignee

INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES · CN

Inventors

Kaiyou Wang · 龙王头村, CN
Ce Hu · Beijing, CN

Key dates

Filing date	Feb 5, 2020
Grant date	Feb 15, 2022
Priority date	—
Expiry date	Jun 9, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Exemplary embodiments of the present disclosure provide a spin valve and a spintronic device comprising the same. The spin valves may comprise two or more magnetic layers stacked in sequence, wherein any two adjacent magnetic layers among the two or more magnetic layers have different coercive forces, and at least one of the any two adjacent magnetic layers is a van der Waals magnetic layer, wherein the van der Waals magnetic layer refers to a magnetic layer made of a van der Waals magnetic material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.