Method and apparatus for calculating equivalent mechanical parameters of film layer etching region
US11250185B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 25, 2018 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Oct 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/762
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for calculating equivalent mechanical parameters of a film layer etching region is provided, by which more accurate equivalent mechanical parameters, which will be used in a process of manufacturing a display substrate of a terminal, may be obtained, thereby obtaining a display substrate with less defects. The method includes: selecting at least a part of the film layer etching region as an analysis region; establishing a planar model corresponding to the analysis region; performing grid division on the planar model at a first density; analyzing, by means of a finite element method, first simulation stresses of the planar model in simulated boundary conditions according to the actual mechanical parameters of a film layer material and the grid division of the first density; and calculating equivalent mechanical parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.