Patent · US Active

Memory cell, memory device, and related identification tag

US11250922B2 · kind B2 · utility

0Cited by

1References

19Claims

0Family size

Assignee

AP MEMORY TECHNOLOGY CORPORATION · TW

Inventors

Owen Li · Zhubei City, TW
Wen-Liang Chen · Beijing, CN

Key dates

Filing date	Apr 20, 2020
Grant date	Feb 15, 2022
Priority date	—
Expiry date	Apr 20, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/4125
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory cell includes: a latch, powered by a first reference voltage and a second reference voltage different from the first reference voltage, and having a first connecting terminal and a second connecting terminal; a first programmable fuse, having a first terminal coupled to the first connecting terminal and a second terminal coupled to the second reference voltage; and a second programmable fuse, having a first terminal coupled to the second connecting terminal and a second terminal coupled to the second reference voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.