Semiconductor devices and fabrication methods thereof

US11251044B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Wei Shi · Tangxia, CN
• Youcun Hu · Shanghai, CN

Key dates

• Filing date: Feb 27, 2020
• Grant date: Feb 15, 2022
• Expiry date: Mar 11, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0276
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a semiconductor device includes providing a to-be-etched layer, including alternately arranged first regions and second regions along a first direction; forming a first mask layer on the to-be-etched layer; and forming a top mask layer on the first region and extending to the second region along the first direction. The projection pattern of the top mask layer divides the first mask layer formed on the first region into portions arranged in a second direction that is perpendicular to the first direction. The method further includes removing a portion of the first mask layer formed on the first region on both sides of the top mask layer to form a first trench. The first mask layer on the first region under the top mask layer forms a separation mask layer which divides the first trench into portions arranged in the second direction.