Power semiconductor module for improved heat dissipation and power density, and method for manufacturing the same
US11251116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2020 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Feb 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a semiconductor module, especially a power semiconductor module, in which the heat dissipation is improved and the power density is increased. The semiconductor module may include at least two electrically insulating substrates, each having a first main surface and a second main surface opposite to the first main surface. On the first main surface of each of the substrates, at least one semiconductor device is mounted. An external terminal is connected to the first main surface of at least one of the substrates. The substrates are arranged opposite to each other so that their first main surfaces are facing each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.