Field plate semiconductor device

US11251274B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Romain Gwoziecki · Foulain, FR
• Gwenael Le Rhun · Grenoble, FR

Key dates

• Filing date: Nov 12, 2019
• Grant date: Feb 15, 2022
• Expiry date: Feb 11, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A semiconductor device includes a substrate; a semiconductor structure arranged on the substrate, the semiconductor structure including at least one first semiconductor layer; an insulator layer arranged on the semiconductor structure; a field plate covering a part of the insulator layer, wherein the insulator layer includes a non-linear dielectric material having a permittivity that decreases as an electric field traversing the dielectric material increases.