LDMOS transistor and method for manufacturing the same
US11251276B2 · kind B2 · utility
0Cited by
17References
15Claims
0Family size
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Key dates
| Filing date | May 17, 2019 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | May 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An LDMOS transistor can include: a field oxide layer structure adjacent to a drain region; and at least one drain oxide layer structure adjacent to the field oxide layer structure along a lateral direction, where a thickness of the drain oxide layer structure is less than a thickness of the field oxide layer, and at least one of a length of the field oxide layer structure and a length of the drain oxide layer structure is adjusted to improve a breakdown voltage performance of the LDMOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.