Trench-gate MOS transistor and method for manufacturing
US11251278B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 8, 2020 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Sep 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; and a control electrode between the semiconductor part and the second electrode. The control electrode is provided inside a trench of the semiconductor part. The control electrode is electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film. The control electrode includes an insulator at a position apart from the first insulating film and the second insulating film. The semiconductor part includes a first layer of a first conductivity type provided between the first and second electrodes, the second layer of a second conductivity type provided between the first layer and the second electrode and the third layer of the first conductivity type selectively provided between the second layer and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.