Silicon carbide semiconductor device and manufacturing method of same
US11251299B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2018 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | May 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A drift layer made of silicon carbide has a first conductivity type. A body region on the drift layer has a second conductivity type. A source region on the body region has the first conductivity type. A gate insulating film is on each inner wall of at least one trench. A protective layer has at least a portion below the trench, is in contact with the drift layer, and has the second conductivity type. A first low-resistance layer is in contact with the trench and the protective layer, straddles a border between the trench and the protective layer in the depth direction, has the first conductivity type, and has a higher impurity concentration than the drift layer. A second low-resistance layer is in contact with the first low-resistance layer, is away from the trench, has the first conductivity type, and has a higher impurity concentration than the first low-resistance layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.