Semiconductor device and method of manufacturing semiconductor device
US11251300B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 19, 2018 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Apr 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.