Thin film transistor comprising light shielding layer and light blocking portion and method for manufacturing the same, display panel and display device
US11251309B2 · kind B2 · utility
1Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Dec 14, 2017 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | Dec 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/423
Abstract
Embodiments of the present disclosure relate to a thin film transistor, a method for manufacturing the same, a display panel, and a display device. The thin film transistor includes a substrate, an active layer located on the substrate, and a light shielding layer, a first dielectric layer, and a second dielectric layer located between the substrate and the active layer, wherein the first dielectric layer is located between the second dielectric layer and the substrate, and wherein a refractive index of the first dielectric layer is greater than a refractive index of the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.