Semiconductor light emitting device and method of fabricating the same
US11251328B2 · kind B2 · utility
0Cited by
4References
19Claims
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Key dates
| Filing date | May 11, 2020 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | May 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.