Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning

US11251367B2 · kind B2 · utility

Inventors

• Yimin Guo · San Jose, US
• Rongfu Xiao · Dublin, US
• Jun Chen · Taichung, TW

Key dates

• Filing date: Mar 2, 2020
• Grant date: Feb 15, 2022
• Expiry date: May 27, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.