Nonvolatile memory device having multi-level resistance and capacitance characteristics, and manufacturing method thereof
US11251371B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2018 |
| Grant date | Feb 15, 2022 |
| Priority date | — |
| Expiry date | May 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A nonvolatile memory device having multi-level resistance and capacitance values is provided. Such a nonvolatile memory device includes: a substrate; a first electrode that is provided on the substrate; a dielectric layer that is provided on the first electrode, has resistance and capacitance changed by a tunneling conduction phenomenon of charges according to an applied voltage, has rectifying characteristics, and includes a dielectric material; an active layer that is provided on the dielectric layer, has resistance and capacitance changed according to an applied voltage, and includes a graphene oxide complex; and a second electrode that is provided on the active layer. In addition, the nonvolatile memory device has multi-level resistance and capacitance values according to an applied voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.