Patent · US Active

Level shifter with ESD protection

US11251782B1 · kind B1 · utility

3Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 10, 2020
Grant dateFeb 15, 2022
Priority date
Expiry dateNov 10, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/60
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

As disclosed herein, a level shift circuit includes devices that are responsive to an ESD signal for placing those devices in a specific condition in response to the ESD signal indicating an ESD event. In some embodiments, the devices are transistors in current paths that are placed in a condition such that during an ESD event, voltage differentials in the current paths across voltage domain boundaries do not damage the circuitry of the level shift circuit. In some embodiments, some of the same devices that are responsive to the ESD event are also responsive to a signal to that detects the absence of a power supply voltage of one of the domains and places those devices in a condition to disable the level shift circuit if the power supply voltage is not present.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.