Patent · US Active

Integrated digital force sensors and related methods of manufacture

US11255737B2 · kind B2 · utility

4Cited by
164References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 9, 2018
Grant dateFeb 22, 2022
Priority date
Expiry dateFeb 9, 2038

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2203/0728
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.