Pressure gauge chip and manufacturing process thereof
US11255740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2017 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Oct 26, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/06
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention is related to a sensor. In particular, the present invention is related to a pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a pressure sensor die is provided. The pressure sensor die is uniformly compressed by the external pressure to be measured and can deform freely inside the chamber. The pressure sensor die is primarily constructed of single crystalline silicon and comprises a substrate and a cap connected together. A recess is formed on the cap. The recess forms a sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. The substrate further comprises a plurality of piezoresistive sensing elements which are located inside the sealed cavity. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.