Semiconductor device for indirect detection of electromagnetic radiation and method of production
US11255983B2 · kind B2 · utility
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2References
17Claims
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Key dates
| Filing date | Apr 19, 2018 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Apr 19, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/2019
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
The semiconductor device comprises a substrate of semiconductor material having a main surface, an integrated circuit in the substrate, a photodetector element or array of photodetector elements arranged at or above the main surface, and at least one nanomaterial film arranged above the main surface. At least part of the nanomaterial film has a scintillating property. The method of production includes the use of a solvent to apply the nanomaterial film, in particular by inject printing, by silk-screen printing, by spin coating or by spray coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.