Semiconductor device and method of making
US11256114B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 11, 2020 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Feb 11, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12178
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device is provided. The semiconductor device includes a silicon nitride waveguide in a first dielectric layer over a substrate. The semiconductor device includes a semiconductor waveguide in a second dielectric layer over the first dielectric layer. The first dielectric layer including the silicon nitride waveguide is between the second dielectric layer including the semiconductor waveguide and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.