Molecular layer etching

US11257682B2 · kind B2 · utility

Assignee

• UCHICAGO ARGONNE, LLC · US

Inventors

• Matthias J. Young · Columbia, US
• Steven Payonk Letourneau · Naperville, US
• Devika Choudhury · Naperville, US
• Jeffrey W. Elam · Elmhurst, US
• Angel Yanguas-Gil · Northbrook, US
• Anil U. Mane · Naperville, US

Key dates

• Filing date: Sep 30, 2019
• Grant date: Feb 22, 2022
• Expiry date: Sep 30, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31138
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of etching an organic or hybrid inorganic/organic material. The method etches molecular layer deposition coatings. An etching cycle comprises a first half reaction exposing the coating to a precursor. A second half reaction exposes a second precursor, removing or etching a portion of the coating.