Schottky barrier diode with improved Schottky contact for high voltages

US11257919B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventor

• Martin Knaipp · Kufstein, AT

Key dates

• Filing date: Sep 24, 2018
• Grant date: Feb 22, 2022
• Expiry date: Sep 24, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115

Abstract

The Schottky barrier diode comprises a semiconductor body with a main surface, a doped region and a further doped region of the semiconductor body, which extend to the main surface, the doped region and the further doped region having opposite types of electric conductivity, a subregion and a further subregion of the further doped region, the subregions being contiguous with one another, the further subregion comprising a higher doping concentration than the subregion, a silicide layer on the main surface, the silicide layer forming an interface with the doped region, an electric contact on the doped region, and a further electric contact electrically connecting the further doped region with the silicide layer.