Method of forming a power semiconductor device

US11257946B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Erich Griebl · Dorfen, DE
• Markus Beninger-Bina · Großhelfendorf, DE
• Matteo Dainese · Munich, DE
• Ingo Dirnstorfer · Eindhoven, NL

Key dates

• Filing date: Jan 8, 2020
• Grant date: Feb 22, 2022
• Expiry date: Jan 8, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a power semiconductor device includes: arranging a control electrode at least partially on or inside a semiconductor body; forming elevated source regions in the semiconductor body by: implanting first conductivity type dopants into the semiconductor body; forming a recess mask layer covering at least areas of intended source regions; and removing portions of the semiconductor body uncovered by the recess mask layer to form the elevated source regions and recessed body regions at least partially between the source regions. A dielectric layer is formed on the semiconductor body. A contact hole mask layer is formed on the dielectric layer. Portions of the dielectric layer uncovered by the contact hole mask layer are removed to form a contact hole which is filled at least partially with a conductive material to establish an electrical contact with at least a portion of the elevated source and recessed body regions.