Method of making semiconductor device having first and second epitaxial materials
US11257951B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2020 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Nov 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/40
Abstract
A method of manufacturing a semiconductor device includes forming a first gate stack over a substrate. The method further includes etching the substrate to define a cavity. The method further includes growing a first epitaxial (epi) material in the cavity, wherein the first epi material includes a first upper surface having a first crystal plane. The method further includes growing a second epi material on the first epi material, wherein the second epi material includes a second upper surface having the first crystal plane. The method further includes treating the second epi material, wherein treating the second epi material comprises causing the second upper surface to transform to a second crystal plane different from the first crystal plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.