Thin film transistor and manufacturing method thereof, and display apparatus

US11257954B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Xiaochen Ma · Beijing, CN
• Guangcai Yuan · Beijing, CN
• Ce Ning · Beijing, CN
• Xin Gu · San Francisco, US
• Hehe HU · Beijing, CN

Key dates

• Filing date: Nov 19, 2019
• Grant date: Feb 22, 2022
• Expiry date: Nov 19, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/27

Abstract

Provided are a thin film transistor including: a base cushion layer having a recessed portion, base insulating layer, source-drain layer and active layer. The base insulating layer is located on a side of the base cushion layer where the recessed portion is located, and has a first and second partition walls that are spaced apart, and an orthographic projection region of a gap region between the first and second partition walls onto the base cushion layer is located at a region where the recessed portion is located; and both orthographic projection regions of the first and second partition walls onto the base cushion layer partially overlap with the recessed portion region; and both the source-drain layer and the active layer are located on the side of the base insulating layer away from the base cushion layer.