Method for passing photovoltaic current between a subcell formed from a group II-VI semiconductor material and a subcell formed from a group IV semiconductor material
US11257973B2 · kind B2 · utility
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Key dates
| Filing date | Jul 1, 2019 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Jul 1, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A method for passing photovoltaic current between a subcell formed from a single crystal Group ll-VI semiconductor material and a subcell formed from a single crystal Group IV semiconductor material, includes the steps of forming a first subcell by an epitaxial growth process, the first subcell having a first upper surface; forming a tunnel heterojunction between the first subcell and the second subcell, and tunneling carriers formed by light incident on the first and second subcells through the tunnel heterojunction, thereby permitting a photoelectric series current to flow through the first and second subcells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.