Diffusion based ex-situ group V (P, As, Sb, Bi) doping in polycrystalline CdTe thin film solar cells
US11257977B2 · kind B2 · utility
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Key dates
| Filing date | Mar 3, 2021 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Mar 3, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Described herein is a diffusion-based ex-situ group V element doping method in the CdCl2 heat-treated polycrystalline CdTe film. The ex-situ doping using group V halides, such as PCl3, AsCl3, SbCl3, or BiCl3, demonstrated a promising PCE of ˜18% and long-term light soaking stability in CdSe/CdTe and CdS/CdTe devices with decent carrier concentration>1015 cm−3. This ex-situ solution or vapor process can provide a low-cost alternative pathway for effective doping of As, as well as P, Sb, and Bi, in CdTe solar cells with limited deviation from the current CdTe manufacturing process.
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