Light emitting diodes formed on nanodisk substrates and methods of making the same
US11257983B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2019 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Aug 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.