Formation of a correlated electron material (CEM)
US11258010B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 12, 2019 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Sep 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) such as in a CEM device capable of switching between and/or among impedance states. In particular embodiments, a CEM may be formed from one or more transition metal oxides (TMOs), one or more post transition metal oxides (PTMOs) or one or more post transition metal chalcogenides (PTMCs), or a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.