Dual image sensor including quantum dot layer
US11258935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2018 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Mar 28, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y20/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a dual image sensor. The dual image sensor according to one embodiment of the present invention includes first and second image sensor modules mounted on a printed circuit board, wherein the first image sensor module includes a first housing mounted on the printed circuit board; a first image sensor mounted on the printed circuit board and formed on a first surface of the first housing; and a first lens formed on a second surface of the first housing, and the second image sensor module includes a second housing mounted on the printed circuit board; a second image sensor mounted on the printed circuit board and formed on a first surface of the second housing; a second lens formed on a second surface of the second housing; and a quantum dot layer formed between the second image sensor and the second lens and absorbing ultraviolet light and emitting visible light converted from the absorbed ultraviolet light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.