Image sensor
US11258968B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Dec 28, 2016 |
| Grant date | Feb 22, 2022 |
| Priority date | — |
| Expiry date | Apr 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Examples of image sensors are described herein. In an example, an image sensor may comprise an array of hybrid pixels, where each hybrid pixel includes light sensing unit and a non-volatile memory component coupled to the light sensing unit. The light sensing unit comprises a light detecting element and a charge to voltage conversion unit. The charge to voltage conversion unit is to provide an output pixel signal (VPD), based on photo-electrons generated by the light detecting element. Further, the non-volatile component when calibrated to an initial resistance state is to compress the output pixel signal (VPD) during exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.