Method of forming a flexible MEMS device

US11261084B2 · kind B2 · utility

Assignee

• Qorvo US, Inc. · US

Inventors

• Robertus Petrus Van Kampen · 's-Hertogenbosch, NL
• Lance W. Barron · Plano, US
• Mickael Renault · San Jose, US
• Shibajyoti Ghosh Dastider · Roseville, US
• Jacques Marcel Muyango · Rocklin, US
• Richard L. Knipe · McKinney, US

Key dates

• Filing date: Jun 19, 2020
• Grant date: Mar 1, 2022
• Expiry date: Jul 26, 2040

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C1/00158
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.