Semiconductor substrate, semiconductor element and method for producing semiconductor substrate
US11264241B2 · kind B2 · utility
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3References
7Claims
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Key dates
| Filing date | Jul 9, 2018 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Jul 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.