Semiconductor devices employing a barrier layer
US11264321B2 · kind B2 · utility
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101References
20Claims
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Key dates
| Filing date | Nov 1, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Feb 27, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.