Semiconductor storage device comprising staircase portion and method for manufacturing the same
US11264387B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2020 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Mar 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device according to an embodiment includes: a stacked body in which a plurality of conductive layers are stacked via an insulating layer and which has a memory portion in which a plurality of memory cells are disposed and a staircase portion in which end portions of the plurality of conductive layers form a staircase shape. The staircase portion has three or more first sub-staircase portions ascending in a direction opposite to a direction toward the memory portion, and at least one first sub-staircase portion among the three or more first sub-staircase portions is divided into at least an upper staircase and a lower staircase by a difference in level larger than a difference in level of each stair of the first sub-staircase portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.