Process for fabricating an array of germanium-based diodes with low dark current
US11264425B2 · kind B2 · utility
3Cited by
2References
12Claims
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Key dates
| Filing date | Nov 26, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Jan 18, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabricating an optoelectronic device including an array of germanium-based photodiodes including the following steps: producing a stack of semiconductor layers, made from germanium; producing trenches; depositing a passivation intrinsic semiconductor layer, made from silicon; annealing, ensuring, for each photodiode, an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of a semiconductor portion, thus forming a peripheral zone of the semiconductor portion, made from silicon-germanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.