Semiconductor device
US11264468B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 15, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Jan 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a field oxide layer, a gate region and field plate integrated structure and a plurality of contact holes. A body region and a drift region are formed in the semiconductor substrate. An active region is formed in the body region, and a drain region is formed in the drift region. A field oxide layer is located on the drift region and the drift region surrounds a part of the field oxide layer. An integrated structure including a gate region and a field plate, the integrated structure extending from above the field oxide layer to above the body region. A depth of a contact hole closer to the source region penetrating into the field oxide layer is greater than a depth of a contact hole closer to the drain region penetrating into the field oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.