Photosensitive field-effect transistor
US11264521B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2018 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Dec 12, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
A photosensitive field-effect transistor which can be configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The field-effect transistor has a channel (13) made from a two-dimensional material and comprises a photoactive layer (22) which can be configured to donate charge carriers to the transistor channel (13) when electromagnetic radiation is absorbed in the photoactive layer (22). The photosensitive field-effect transistor comprises a top electrode (21) which is in contact with the photoactive layer on one or more contact areas which together form a contact pattern. With a suitably patterned top electrode (21), a voltage applied to the electrode can function as an electrical shutter which can switch the photosensitive field-effect transistor between a light-sensitive state and a light-immune state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.