Manufacturing method of semiconductor light emitting device
US11264532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Dec 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided a manufacturing method of a semiconductor light emitting device including forming a plurality of light emitting cells that are separated on a first substrate, forming a first planarization layer by providing an insulating material on the plurality of light emitting cells, forming a second planarization layer by providing a photoresist on the first planarization layer to have a flat upper surface, and soft baking the photoresist, and dry etching the second planarization layer to a predetermined depth to expose a portion of the first planarization layer provided on the plurality of light emitting cells, and a portion of the second planarization layer remaining between the plurality of light emitting cells on the first planarization layer, wherein forming the second planarization layer and dry etching are repeated at least once to remove the portion of the second planarization layer provided between the plurality of light emitting cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.