Non-fullerene acceptors (NFAS) as interfacial layers in perovskite semiconductor devices
US11264572B2 · kind B2 · utility
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Key dates
| Filing date | Nov 23, 2020 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Nov 23, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for producing an organic non-fullerene electron transport compound includes mixing naphthalene-1,4,5,8-tetracarboxylic dianhydride and an amine compound in dimethylformamide. The method also includes heating the mixture to a temperature greater than or equal to 70° and less than or equal to 160° C. for an amount of time greater than or equal to 1 hour and less than or equal to 24 hours. The method further includes isolating an organic non-fullerene electron transport compound reaction product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.