Thermal temperature sensors for power amplifiers
US11264954B2 · kind B2 · utility
1Cited by
24References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 14, 2019 |
| Grant date | Mar 1, 2022 |
| Priority date | — |
| Expiry date | Mar 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/468
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Thermal temperature sensors for power amplifiers are provided herein. In certain implementations, a semiconductor die includes a compound semiconductor substrate, and a power amplifier including a plurality of field-effect transistors (FETs) configured to amplify a radio frequency (RF) signal. The plurality of FETs are arranged on the compound semiconductor substrate as a transistor array. The semiconductor die further includes a semiconductor resistor configured to generate a signal indicative of a temperature of the transistor array. The semiconductor resistor is located adjacent to one end of the transistor array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.