Patent · US Active

Target structure of physical vapor deposition

US11268186B2 · kind B2 · utility

1Cited by
7References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 17, 2020
Grant dateMar 8, 2022
Priority date
Expiry dateJul 17, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3435
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.