Processes for depositing silicon-containing films using halidosilane compounds

US11268190B2 · kind B2 · utility

Assignee

• Versum Materials US, LLC · US

Inventors

• Xinjian Lei · Vista, US
• Jianheng Li · Santa Clara, US
• John Francis Lehmann · Bethlehem, US
• Alan Charles Cooper · Macungie, US

Key dates

• Filing date: Jun 14, 2016
• Grant date: Mar 8, 2022
• Expiry date: Sep 5, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32055
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.